Atomistic simulations of epitaxial recrystallization in 4H-SiC along the [0001] direction

Journal Article
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 255, iss. 1, pp. 136-140, 2007
Authors
F. Gao, Y. Zhang, R. Devanathan, M. Posselt, W.J. Weber
English