Journal Article
Journal of Materials Research, vol. 21, iss. 4, pp. 811-815, 2006
Authors
W. Jiang, V. Shutthanandan, Y. Zhang, S. Thevuthasan, W.J. Weber, G.J. Exarhos
Abstract
A graphite wafer has been implanted with Mg+to produce a uniform Mg concentration. Subsequent H+implantation covered the Mg+-implanted and -unimplanted regions. Ion-beam analysis shows a higher H retention in graphite embedded with Mg than in regions without Mg. A small amount of H diffuses out of the H+-implanted graphite during thermal annealing at temperatures up to 300 °C. However, significant H release from the region implanted with Mg+and H+ions occurs at 150 °C; further release is also observed at 300 °C. The results suggest that there are efficient H trapping centers and fast pathways for H diffusion in the Mg+-implanted graphite, which may prove highly desirable for reversible H storage.
