Publication - Journal Article A model for phosphosilicate glass deposition via POCl₃ for control of phosphorus dose in Si

Journal Article

Journal of Applied Physics, vol. 112, iss. 12, pp. 124912, 2012

Authors

Renyu Chen, Hannes Wagner, Amir Dastgheib-Shirazi, Michael Kessler, Zihua Zhu, Vaithiyalingam Shutthanandan, Pietro P. Altermatt, Scott T. Dunham

Language English

Publication - Journal Article A model for phosphosilicate glass deposition via POCl3 for control of phosphorus dose in Si