Improved stability of amorphous zinc tin oxide thin film transistors using molecular passivation

Journal Article
Applied Physics Letters, vol. 103, iss. 17, pp. 171602, 2013
Authors
M. S. Rajachidambaram, A. Pandey, S. Vilayurganapathy, P. Nachimuthu, S. Thevuthasan, G. S. Herman
English