Journal Article
Journal of Materials Chemistry C, vol. 6, iss. 9, pp. 2275-2282, 2018
Authors
J. Y. Zhang, W. W. Li, R. L. Z. Hoye, J. L. MacManus-Driscoll, M. Budde, O. Bierwagen, L. Wang, Y. Du, M. J. Wahila, L. F. J. Piper, T.-L. Lee, H. J. Edwards, V. R. Dhanak, K. H. L. Zhang
Abstract
NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. This work reports the controlling of conductivity and increase of work functions by Li doping.
English