Publication - Journal Article Narrowing of band gap at source/drain contact scheme of nanoscale InAs–nMOS DOI https://doi.org/10.1016/j.sse.2018.01.006 Journal Article Solid-State Electronics, vol. 142, pp. 31-35, 2018 Authors A.H. Mohamed, R. Oxland, M. Aldegunde, S.P. Hepplestone, P.V. Sushko, K. Kalna Language English
