Publication - Journal Article Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography

Journal Article

Journal of Applied Physics, vol. 120, iss. 10, pp. 104301, 2016

Authors

Zhaofeng Gan, Daniel E. Perea, Jinkyoung Yoo, Yang He, Robert J. Colby, Josh E. Barker, Meng Gu, Scott X. Mao, Chongmin Wang, S. T. Picraux, David J. Smith, Martha R. McCartney

Language English

Publication - Journal Article Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography

DOI