Publication - Journal Article Characterization of defects in n-type 4H-SiC after high-energy N ion implantation by RBS-channeling and Raman spectroscopy

https://doi.org/10.1016/j.nimb.2014.02.023
Journal Article
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 332, pp. 28-32, 2014
Authors
Venkata C. Kummari, Tilo Reinert, Weilin Jiang, Floyd D. McDaniel, Bibhudutta Rout
English