Raman study of In Ga1−N (x = 0.32–0.9) films irradiated with Xe ions at room temperature and 773 K

Journal Article
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, vol. 415, pp. 48-53, 2018
Authors
W.S. Ai, L.M. Zhang, W. Jiang, J.X. Peng, L. Chen, T.S. Wang
English